Solving CMP Challenges in High-Volume SiC Production
How can manufacturers increase silicon carbide (SiC) production without stumbling over pitfalls in terms of quality and cost? This white paper discusses key chemical mechanical planarization (CMP) process challenges for SiC, such as:
- Optimizing CMP slurry for the unique wafer chemistry and topology
- Overcoming the increased hardness and density of SiC
- Working around higher pad temperatures and ex situ conditioning
These challenges can be overcome by selecting a provider with a comprehensive offering of materials and process solutions that improve yield throughout repeated CMP processing on SiC wafers.